This course
provides a comprehensive foundation in electronic devices and circuits, guiding
students from the underlying physics of semiconductors to the design of
fundamental analog systems. The journey begins with an exploration of how
quantum mechanics gives rise to semiconductor properties, leading to the
understanding of diodes and transistors (BJTs and MOSFETs) at a physical level.
Building on this core knowledge, the course then delves into practical circuit
design, covering DC biasing techniques, the analysis and design of single-stage
amplifiers, and their frequency response. The curriculum culminates in studying
multi-transistor circuits, including differential amplifiers and current
mirrors, which form the building blocks of operational amplifiers. By
integrating device physics with circuit analysis, this course equips students
with the essential skills to analyze, design, and evaluate the performance of
basic analog electronic circuits, creating a seamless bridge from fundamental
principles to real-world applications.
| Course Status : | Upcoming |
| Course Type : | |
| Language for course content : | English |
| Duration : | 8 weeks |
| Category : |
|
| Credit Points : | 3 |
| Level : | Diploma |
| Start Date : | 26 Jan 2026 |
| End Date : | 30 Apr 2026 |
| Enrollment Ends : | 28 Feb 2026 |
| Exam Date : | |
| Translation Languages : | English |
| NCrF Level : | 4.5 — 5.5 |
| Industry Details : | Education and Training |
|
swayam@nitttrc.edu.in, swayam@nitttrc.ac.in
Week
1: Introduction
to Semiconductor Physics
Energy band formation in solids
(Conductors, Insulators, Semiconductors); Intrinsic & Extrinsic
semiconductors (Types of semiconductors); Concept of hole and effective mass;
Charge carriers (electrons and holes).
Week
2: Carrier Transport and Diode
Fundamentals
Carrier transport phenomena: Drift
(conductivity, mobility) and Diffusion; Generation-Recombination (G-R); The
Continuity Equation; Excess carriers and minority carrier injection.
Week 3: The PN Junction
Diode (Static & Dynamic)
PN junction under equilibrium
conditions (built-in potential, depletion region); Steady-state behaviour under
forward and reverse bias (I-V characteristics); Small-signal model (incremental
resistance, diffusion capacitance); Transient and AC behaviour (junction
capacitance, switching); Breakdown mechanisms (Avalanche and Zener).
Week 4: Diode Circuits
and Introduction to Active Devices
Diode Circuit
Applications: Rectifiers (Half-wave, Full-wave), Clampers,
Clippers. Incremental analysis of diode
circuits. Metal-Semiconductor Junctions (Ohmic and Schottky
contacts). Introduction to BJT and MOSFET as three-terminal devices.
Week 5: Bipolar Junction
Transistor (BJT)
BJT physics and modes of operation
(Active, Saturation, Cutoff); I-V characteristics (Input & Output curves);
Large-signal and Ebers-Moll model; Introduction to BJT as an amplifier.
Week 6: MOS Capacitor and
Field-Effect Transistor (MOSFET)
MOS Capacitor: Ideal and
non-ideal structures, C-V characteristics. MOSFET: Structure and
physical operation; Modes of operation (Cutoff, Triode, Saturation); Ideal I-V
characteristics; Small-signal model (transconductance, output resistance);
Non-ideal effects (Channel Length Modulation, Body Effect).
Week 7: DC Biasing of
Transistors
The need for biasing and establishing
the Q-point (DC Operating Point). BJT Biasing: Fixed bias, Voltage
divider bias (emitter stabilized). MOSFET Biasing: Fixed bias,
Voltage divider bias, Constant current biasing. Analysis of bias stability.
Week 8: Single-Stage
Amplifiers (BJT)
Small-Signal Modeling of
BJT. Common-Emitter (CE) amplifier: biasing, incremental analysis
(voltage gain, input/output resistance). Common-Collector (CC/Emitter
Follower) and Common-Base (CB) amplifiers: configuration and
properties. Comparisons and applications of the three configurations.
Week 9: Single-Stage
Amplifiers (MOSFET)
Common-Source (CS) amplifier:
biasing, incremental analysis. Common-Drain (CD/Source
Follower) and Common-Gate (CG) amplifiers: configuration and
properties. Comparisons and applications. Cascoding and
Cascading single-stage amplifiers for improved performance.
Week 10: Amplifier
Frequency Response and Limitations
Internal transistor capacitances (Cπ,
Cμ, Cgs, Cgd); High-frequency small-signal models; Miller's Theorem; Frequency
response of CS/CE amplifiers (finding fL and fH); Swing limits and large-signal
operation.
Week 11: Differential
Amplifiers and Current Mirrors
The Concept of Negative
Feedback (properties, basic topologies). Differential
Amplifiers: MOS and BJT implementations, large-signal and small-signal
analysis, differential and common-mode gain, Common-Mode Rejection Ratio
(CMRR). Current Mirrors: Basic topology and as active loads for
differential pairs.
Week 12: Operational
Amplifiers and Stability Op-Amp as a block (ideal
characteristics). Building a simple Op-Amp: Introduction to the
two-stage op-amp (CS/CG input stage + CE/CS output stage). Frequency
response of multi-stage amplifiers. Stability Analysis: Introduction
to the concept of stability, loop gain, and the Barkhausen criterion;
Introduction to frequency compensation.
Malaya Kumar Nath completed B.E. in Electronics and
Telecommunication Engineering from BPUT Odisha, India, and M. Tech in
Electronics and Communication Engineering (Signal Processing) from the Indian
Institute of Technology Guwahati, India. He completed his PhD in Signal
Processing from the Indian Institute of Technology Guwahati.
He joined the National Institute of Technology
Puducherry, Karaikal in July 2013, where he currently holds an Assistant
Professor position in the Department of Electronics and Communication
Engineering. His area of research includes machine learning and biomedical
image processing. He has published 36 articles in reputable SCI journals
and 27 papers in renowned conferences.
Homepage: https://sites.google.com/view/malaya-kumar-nath/home
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